Preparation and study on epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric films on different substrates
不同衬底上Pb(Zr0.52Ti0.48)O3择优取向铁电薄膜的制备和研究

LaNiO-3 (LNO) thin films were successfully prepared on Si (100) and Pt/Ti/SiO-2/Si substrates by metalorganic decomposition (MOD). Pb(Zr-~0.52 Ti-~0.48 )O-3(PZT) thin films were prepared on the Pt(111)/Ti/SiO-2/Si, LNO/Si(100) and LNO/Pt(111)/Ti/SiO-2/Si substrates by a modified sol-gel method. The crystallographic orientation and the microstructure of the resulting PZT thin films on the different substrates were characterized by x-ray diffraction and scanning electron microscopy. The dielectric and ferroelectric properties of PZT films on the different substrates are discussed. The PZT films deposited on LNO/Pt/Ti/SiO-2/Si and LNO/Si(100) substrates show strong 100] preferred orientation, while the films deposited on Pt/Ti/SiO-2/Si substrates show 110] orientations. PZT films on LNO/Pt/Ti/SiO-2/Si and LNO/Si(100) substrates have larger average grain sizes, dielectric constant and remnant polarizations compared with those grown on Pt/Ti/SiO-2/Si substrates.