%0 Journal Article
%T Preparation and study on epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric films on different substrates<br>不同衬底上Pb(Zr0.52Ti0.48)O3择优取向铁电薄膜的制备和研究
%A Li Jian-Kang
%A Yao Xi
%A <br>李建康
%A 姚 熹
%J 物理学报
%D 2005
%I 
%X LaNiO-3 (LNO) thin films were successfully prepared on Si (100) and Pt/Ti/SiO-2/Si substrates by metalorganic decomposition (MOD). Pb(Zr-~0.52 Ti-~0.48 )O-3(PZT) thin films were prepared on the Pt(111)/Ti/SiO-2/Si, LNO/Si(100) and LNO/Pt(111)/Ti/SiO-2/Si substrates by a modified sol-gel method. The crystallographic orientation and the microstructure of the resulting PZT thin films on the different substrates were characterized by x-ray diffraction and scanning electron microscopy. The dielectric and ferroelectric properties of PZT films on the different substrates are discussed. The PZT films deposited on LNO/Pt/Ti/SiO-2/Si and LNO/Si(100) substrates show strong 100] preferred orientation, while the films deposited on Pt/Ti/SiO-2/Si substrates show 110] orientations. PZT films on LNO/Pt/Ti/SiO-2/Si and LNO/Si(100) substrates have larger average grain sizes, dielectric constant and remnant polarizations compared with those grown on Pt/Ti/SiO-2/Si substrates.
%K LaNiO3 thin film
%K PZT ferroelectric thin film
%K preferred orientation
%K remnant polarization<br>LaNiO3薄膜，
%K PZT铁电薄膜，
%K 择优取向，
%K 剩余极化强度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3D23FEE6B41B07F0&yid=2DD7160C83D0ACED&vid=318E4CC20AED4940&iid=B31275AF3241DB2D&sid=56D8318C31E13244&eid=3D7E9628AA346248&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=11