The measurement of square resistance for microarea by square four-probe techniques and using a modified Rymaszewski''''s formula
用改进的Rymaszewski公式及方形四探针法测定微区的方块电阻

The sheet resistance for a microarea in a large silicon wafers was measured by using a modified Rymaszewski's formulas for a square four_point probe technique. An improved Rymaszewski's formulas was deduced taking into account the shift of probes in square four_point probe measurement. The equation of resistivity for square four_point probe measurement when there were shifts of the probes and there was no shift of the probes was deduced theoretically. A possible error produced by the shift of the probes was analyzed in theory and expressed with graphs. The effect upon measuring results arising from the shift of probes was also discussed. Practical measurement of a specimen has been tested using a self_established equipment of square four_point probes. An equal_value_line graph was plotted for the measurement results.