Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate
Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性

Metal-ferroelectric-semiconductor field-effect-transistors (FFETs) with Ag/Bi4Ti3O12/p-Si gate were fabricated using the high q uality Bi4Ti3O12 on p-Si substrates prepared by Sol-Gel technique. The phase structure characteristics of Bi4Ti 3O12 films, the interface characteristics of ferroelectric/Si a nd the memory characteristics of the FFETs were investigated. Bi4Ti 3O12 films with high preferred c-axis-orientation are obta ined at appropriate annealing temperature which helps to improve the interface c haracteristics of ferroelectric/Si. The C-V hysteresis curves with clockwise loo ps prove that the FFETs could realize a memory effect due to the ferroelectric p olarization of Bi4Ti3O12 films, and the capacit ance decay of 11% in 16 hours indicates that the FFETs have good polarization ch arge retention. The counter-clockwise Ids-VG hysterisis cu rve of the FFETs demonstrates that the channel current is modulated by the ferro electric polarization of Bi4Ti3O12 films.