%0 Journal Article
%T Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate<br>Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性
%A Wang Hua
%A Ren Ming-Fang
%A <br>王 华
%A 任鸣放
%J 物理学报
%D 2006
%I 
%X Metal-ferroelectric-semiconductor field-effect-transistors (FFETs) with Ag/Bi4Ti3O12/p-Si gate were fabricated using the high q uality Bi4Ti3O12 on p-Si substrates prepared by Sol-Gel technique. The phase structure characteristics of Bi4Ti 3O12 films, the interface characteristics of ferroelectric/Si a nd the memory characteristics of the FFETs were investigated. Bi4Ti 3O12 films with high preferred c-axis-orientation are obta ined at appropriate annealing temperature which helps to improve the interface c haracteristics of ferroelectric/Si. The C-V hysteresis curves with clockwise loo ps prove that the FFETs could realize a memory effect due to the ferroelectric p olarization of Bi4Ti3O12 films, and the capacit ance decay of 11% in 16 hours indicates that the FFETs have good polarization ch arge retention. The counter-clockwise Ids-VG hysterisis cu rve of the FFETs demonstrates that the channel current is modulated by the ferro electric polarization of Bi4Ti3O12 films.
%K FFETs
%K Bi4Ti3O12
%K memory chara cteristics
%K sol-gel method<br>铁电场效应晶体管
%K Bi4Ti3O12
%K 存储
%K 特性
%K 溶胶-凝胶工艺
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=D0B9D2B29EA99D7F&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=38B194292C032A66&sid=0DC3089A5408D592&eid=CA590345B99F3387&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10