Fabrication of nanoimprint mold by multilayer film deposition technique
利用多层膜生长技术制备纳米印章模板

To overcome the difficulties in the fabrication of the nanoimprint mold with linewidth smaller than 50 nm, we deposited a-Si/SiN~ multilayer films in plasma enhanced chemical vapor deposition system and then prepared the relieo-nanomold on the cleaved section of the multilayer films by selectively etching or reactive ion etching process. Due to the slow deposition rate, the thickness of the sublayer, and therefore the size of the strips and grooves can be controlled on the nanometer scale by altering deposition time. The smallest width we get by now is the 20 nm strips and 20 nm pitches, which is better than that fabricated by electron beam lithography.