Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by sol-gel method
(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究

Keywords: PZT thin film,preferred orientation,buffer layer,remnant polarization
PZT铁电薄膜，,择优取向，,过渡层，,剩余极化强度

Full-Text   Cite this paper   Add to My Lib

Abstract:

选用不同浓度的Pb(Zr0.52Ti0.48)O3溶胶，用Sol-gel法在Pt/Ti/SiO2/Si基片上沉积一层厚度不同的Pb(Zr0.52Ti0.48)O3 (PZT52)过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb(Zr0.52Ti0.48)O

Full-Text