Electron holography determination of the growth polarity of GaN/AlGaN multi-quantum well structure
电子全息方法测定GaN/AlGaN多量子阱结构的极性

A method to determine the growth polarity of GaN/AlGaN multi-quantum wells (MQWs) has been proposed. Electron holography (EH) study of the potential profiles of the multi-quantum well structure has been used here to determine the direction of build-in electric field that is strictly related to the growth polarity.