%0 Journal Article
%T Electron holography determination of the growth polarity of GaN/AlGaN multi-quantum well structure<br>电子全息方法测定GaN/AlGaN多量子阱结构的极性
%A Dai Tao
%A Liu Yu-Zi
%A Zhang Ze
%A <br>戴 涛
%A 刘玉资
%A 张 泽
%J 物理学报
%D 2006
%I 
%X A method to determine the growth polarity of GaN/AlGaN multi-quantum wells (MQWs) has been proposed. Electron holography (EH) study of the potential profiles of the multi-quantum well structure has been used here to determine the direction of build-in electric field that is strictly related to the growth polarity.
%K electron holography
%K growth polarity
%K polarization<br>电子全息
%K 生长极性
%K 极化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=12EB212A93F7B7D5&yid=37904DC365DD7266&vid=E514EE58E0E50ECF&iid=708DD6B15D2464E8&sid=0B3A208BFDE8FF0D&eid=F53F7D93EE8B8BF8&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=18