Preparation of vanadium dioxide thin film with high temperature coefficient of resistance from V2O5 powder by ion beam enhanced deposition
用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO2薄膜

A new method was employed to prepare VO 2 thin film directly from V 2O 5 powder. Pressed V 2O 5 powder of 99\^7% purity was used as sputtering target by argon ion beam. The hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. The bombardment of Ar + could break V\_O bond of V 2O 5 molecules in the deposited film and the implanted H + resulting in deoxidization of V 2O 5 to VO 2 thin film. After annealing, VO 2 film with temperature coefficient of resistance(TCR) as high as 4% was obtained. The TCR increasing was due to the stress introduced in film by implantation of argon ions with high doses, which decreases the transition temperature of the VO 2 film by ion beam enbanced deposition and the enlarged slope of resistance temperature curve.