%0 Journal Article
%T Preparation of vanadium dioxide thin film with high temperature coefficient of resistance from V2O5 powder by ion beam enhanced deposition<br>用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO2薄膜
%A Li Jin-Hu
%A Yuan Ning-Yi
%A H L W Chan
%A Lin Cheng-Lu
%A <br>李金华
%A 袁宁一
%A 陈王丽华
%A 林成鲁
%J 物理学报
%D 2002
%I 
%X A new method was employed to prepare VO 2 thin film directly from V 2O 5 powder. Pressed V 2O 5 powder of 99\^7% purity was used as sputtering target by argon ion beam. The hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. The bombardment of Ar + could break V\_O bond of V 2O 5 molecules in the deposited film and the implanted H + resulting in deoxidization of V 2O 5 to VO 2 thin film. After annealing, VO 2 film with temperature coefficient of resistance(TCR) as high as 4% was obtained. The TCR increasing was due to the stress introduced in film by implantation of argon ions with high doses, which decreases the transition temperature of the VO 2 film by ion beam enbanced deposition and the enlarged slope of resistance temperature curve.
%K ion beam enhanced deposition
%K vanadium dioxide thin film
%K thermal coefficient of resistance<br>离子束增强沉积
%K VO2薄膜
%K 热电阻温度系数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3CF9CB097EACC88A&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=5D311CA918CA9A03&sid=DC8E8C328836185A&eid=2326CE64312F50FD&journal_id=1000-3290&journal_name=物理学报&referenced_num=14&reference_num=21