Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories
锗/硅异质纳米结构中空穴存储特性研究

Based on analysis of the physical process of hole tunneling, the time character is tics of the writing/erasing and retention in p-channel Ge/Si hetero-nanocr ystal-based metal_oxide_semiconductor field_effect transistor(MOSFET) memory ha ve been simulated numerically. Owing to the advantages of a compound potential well and a higher band offset in the valence band, the rete ntion time is increased up to the orders of over 10 8 and 10 5, compared with the c onventional Si_nanocrystal_based MOSFET memory and the n-channel Ge/Si hete ro_nanocrystal_based MOSFET memory, respectively. Moreover, the present device k eeps on having high_speed writing/erasing in the direct_tunneling ultrathin oxide reg ime. It would be expected to solve the contradictory problem between high_speed programming and long retention, therefore, the performance would be substantiall y improved.