%0 Journal Article
%T Hole storage characteristics in Ge/Si hetero-nanocrystal-based memories<br>锗/硅异质纳米结构中空穴存储特性研究
%A 杨红官
%A 施毅
%A 闾锦
%A 濮林
%A 张荣
%A 郑有
%J 物理学报
%D 2004
%I 
%X Based on analysis of the physical process of hole tunneling, the time character is tics of the writing/erasing and retention in p-channel Ge/Si hetero-nanocr ystal-based metal_oxide_semiconductor field_effect transistor(MOSFET) memory ha ve been simulated numerically. Owing to the advantages of a compound potential well and a higher band offset in the valence band, the rete ntion time is increased up to the orders of over 10 8 and 10 5, compared with the c onventional Si_nanocrystal_based MOSFET memory and the n-channel Ge/Si hete ro_nanocrystal_based MOSFET memory, respectively. Moreover, the present device k eeps on having high_speed writing/erasing in the direct_tunneling ultrathin oxide reg ime. It would be expected to solve the contradictory problem between high_speed programming and long retention, therefore, the performance would be substantiall y improved.
%K Ge/Si
%K hetero_nanocrystal
%K memory
%K hole storage
%K simulation<br>锗／硅异质结
%K 纳米结构
%K 存储器
%K 空穴存储
%K 数值模拟
%K 隧穿势垒
%K 器件结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=D51DD0555C921409&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=E158A972A605785F&sid=C4B40BDE3E33484C&eid=DB29DCDE63A11F6A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19