Comparison of behaviors of three single-electron dynamic memories with different structures based on Monte Carlo simulation
基于Monte Carlo模拟的三种不同结构单电子动态存储器特性比较

We have simulated the behaviors of multiple-tunnel-junction, symmetry-trap and ring-type single-electron dynamic memories separately by means of Monte Carlo method. The storage-times of the devices under the influence of such parameters as capacitance and temperature have been analyzed. This revealed that the storage-times of a ring and a symmetric trap-type memory are longer than that of a multiple-tunnel-junction-type memory.