%0 Journal Article
%T Comparison of behaviors of three single-electron dynamic memories with different structures based on Monte Carlo simulation
基于Monte Carlo模拟的三种不同结构单电子动态存储器特性比较
%A Xu Hai-Xia Li Qian-Guang Min Yong-Quang Li Zhi-Yang
%A
许海霞
%A 李钱光
%A 闵永泉
%A 李志扬
%J 物理学报
%D 2004
%I
%X We have simulated the behaviors of multiple-tunnel-junction, symmetry-trap and ring-type single-electron dynamic memories separately by means of Monte Carlo method. The storage-times of the devices under the influence of such parameters as capacitance and temperature have been analyzed. This revealed that the storage-times of a ring and a symmetric trap-type memory are longer than that of a multiple-tunnel-junction-type memory.
%K Monte Carlo simulation
%K single-electron memory device
%K storage time
Monte
%K Carlo模拟
%K 单电子存储器
%K 存储时间
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=22C5D913F78715EA&yid=D0E58B75BFD8E51C&vid=8E6AB9C3EBAAE921&iid=94C357A881DFC066&sid=6E73C7EB16CBAB68&eid=1254F6F9A8625D48&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=11