Average-bond-energy method in Schottky barrier height calculation
Schottky势垒高度理论计算中的平均键能方法

Ten barrier heights of metal-semiconductor contacts are calculated by taking the average-bond-energy as the reference level- The coincidence degree of the calculational values and the experimental values is as good as that of Tersoff's charge-neutrality point method in theoretical calculation of metal-semiconductor contacts- The calculational results are much better than that of Harrison's tight-binding method and Cardona's dielectric midgap energy method-