%0 Journal Article
%T Average-bond-energy method in Schottky barrier height calculation<br>Schottky势垒高度理论计算中的平均键能方法
%A Li Shu-Ping
%A Wang Ren-Zhi
%A <br>李书平
%A 王仁智
%J 物理学报
%D 2003
%I 
%X Ten barrier heights of metal-semiconductor contacts are calculated by taking the average-bond-energy as the reference level- The coincidence degree of the calculational values and the experimental values is as good as that of Tersoff's charge-neutrality point method in theoretical calculation of metal-semiconductor contacts- The calculational results are much better than that of Harrison's tight-binding method and Cardona's dielectric midgap energy method-
%K barrier height
%K average-bond-energy method
%K Fermi level<br>势垒高度，
%K 平均键能方法，
%K 费米能级
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=FCFA9B180DF562C8&yid=D43C4A19B2EE3C0A&vid=286FB2D22CF8D013&iid=38B194292C032A66&sid=8C044EC256B1039D&eid=DEBDB7F30FBA7F9B&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=16