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物理学报  2001 

C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100)
Bi2Ti2O7/Si薄膜的制备及C-V特性研究

Keywords: C-V,characteristics,Bi2Ti2O7 thin films,charge's move
C-V特性
,Bi2Ti2O7薄膜,电荷迁移

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Abstract:

We report the growth of Bi2Ti2O7 thin films on n type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro spectroscopy measurements are used to check the film properties. It is shown that the film is a multi crystal film dominated by the Bi2Ti2O7 phase. The C-V measurements are also performed on Au/Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.

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