%0 Journal Article
%T C-V CHARACTERISTICS OF Bi2Ti2O7 THIN FILMS ON n-Si(100)<br>Bi2Ti2O7/Si薄膜的制备及C-V特性研究
%A WANG SHAO-WEI
%A LU WEI
%A WANG HONG
%A WANG DONG
%A WANG MIN
%A SHEN XUE-CHU
%A <br>王少伟
%A 陆卫
%A 王弘
%A 王栋
%A 王民
%A 沈学础
%J 物理学报
%D 2001
%I 
%X We report the growth of Bi2Ti2O7 thin films on n type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro spectroscopy measurements are used to check the film properties. It is shown that the film is a multi crystal film dominated by the Bi2Ti2O7 phase. The C-V measurements are also performed on Au/Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.
%K C-V
%K characteristics
%K Bi2Ti2O7 thin films
%K charge's move<br>C-V特性
%K Bi2Ti2O7薄膜
%K 电荷迁移
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2536E2305512C9DE&yid=14E7EF987E4155E6&vid=771152D1ADC1C0EB&iid=59906B3B2830C2C5&sid=6F1FAC324A170F6B&eid=4B4A5E2A8D14C2AC&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19