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物理学报  1999 

STUDY OF THE INTER-BAND TRANSITION OF THE GaAs SINGLE-CRYSTAL FILM ON SrTiO3 SUBSTRATE BY MBE
GaAs/SrTiO3外延半导体单晶薄膜带间跃迁研究

Keywords: 砷化镓,带间跃迁,半导体,单晶,薄膜

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Abstract:

This paper reports the molecular beam epitaxy growth of the GaAs single crystal film on the perovskite oxide SrTiO3(001) substrate. The photo modulated reflectance spectroscopy and the photoluminescence measurement show that the energy band gap

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