%0 Journal Article
%T STUDY OF THE INTER-BAND TRANSITION OF THE GaAs SINGLE-CRYSTAL FILM ON SrTiO3 SUBSTRATE BY MBE<br>GaAs/SrTiO3外延半导体单晶薄膜带间跃迁研究
%A CHEN YI-DONG
%A LIU XING-QUAN
%A LU WEI
%A SHI GUO-LIANG
%A SHEN XUE-CHU
%A QXZHAO
%A MWILLANDER
%A <br>陈益栋
%A 刘兴权
%A 陆 卫
%A 史国良
%A 沈学础
%A Q.X.ZHAO
%A M.WILLANDER
%J 物理学报
%D 1999
%I 
%X This paper reports the molecular beam epitaxy growth of the GaAs single crystal film on the perovskite oxide SrTiO3(001) substrate. The photo modulated reflectance spectroscopy and the photoluminescence measurement show that the energy band gap
%K 砷化镓
%K 带间跃迁
%K 半导体
%K 单晶
%K 薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=52C3612222CD817D71670619E9D7DD38&yid=B914830F5B1D1078&vid=B6DA1AC076E37400&iid=9CF7A0430CBB2DFD&sid=A5884B9A69EE562A&eid=72C9FC6259F90AE2&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=0