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物理学报 1999
EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET
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Abstract:
系统地研究了BF+2注入硅栅P-channel metal-oxide-semiconductor field-effect transistor(PMOSFET)阈值电压漂移与γ辐照总剂量之间的关系，深入地探讨了BF+2注入抗γ辐射加固的机理.结果表明，BF+2注入对硅栅P-channel metal-oxide-semiconductor(PMOS)在γ辐照下引起的阈值电
