%0 Journal Article
%T EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET<br>BF+2注入加固硅栅PMOSFET的研究
%A ZHANG TING-QING
%A LIU JIA-LU
%A LI JIAN-JUN
%A WANG JIAN-PING
%A ZHANG ZHENG-XUAN
%A XU NA-JUN
%A ZHAO YUAN-FU
%A HU YU-HONG
%A <br>张廷庆
%A 刘家璐
%A 李建军
%A 王剑屏
%A 张正选
%A 徐娜军
%A 赵元富
%A 胡浴红
%J 物理学报
%D 1999
%I 
%X 系统地研究了BF+2注入硅栅P-channel metal-oxide-semiconductor field-effect transistor(PMOSFET)阈值电压漂移与γ辐照总剂量之间的关系，深入地探讨了BF+2注入抗γ辐射加固的机理.结果表明，BF+2注入对硅栅P-channel metal-oxide-semiconductor(PMOS)在γ辐照下引起的阈值电
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3C865D782028E2EB&yid=B914830F5B1D1078&vid=B6DA1AC076E37400&iid=59906B3B2830C2C5&sid=A05AF66BE0C3DF48&eid=05E18E8B63815C20&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0