INVESTIGATION OF TENSILE-STRAINED,LONG WAVELENGTH In1-xGaxAsyP1-y/InP WITH QUANTUM-WELL STRUCTURE BY PHTOLUMINESCENCE MEASUREMENTS
张应变In1-xGaxAsyP1-y/InP材料光致荧光谱温度特性的测试与分析

Keywords: 半导体,磷化铟,光致荧光谱,量子阱,温度特性

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Abstract:

报道了具有2，3个量子阱的In1-x1Gax1Asy1P1-y1/In1-x2Gax2Asy2P1-y2/InP张应变量子阱材料的光致荧光谱和X射线双晶衍射摇

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