%0 Journal Article
%T INVESTIGATION OF TENSILE-STRAINED,LONG WAVELENGTH In1-xGaxAsyP1-y/InP WITH QUANTUM-WELL STRUCTURE BY PHTOLUMINESCENCE MEASUREMENTS<br>张应变In1-xGaxAsyP1-y/InP材料光致荧光谱温度特性的测试与分析
%A DING GUO-QING
%A <br>丁国庆
%J 物理学报
%D 1998
%I 
%X 报道了具有2，3个量子阱的In1-x1Gax1Asy1P1-y1/In1-x2Gax2Asy2P1-y2/InP张应变量子阱材料的光致荧光谱和X射线双晶衍射摇
%K 半导体
%K 磷化铟
%K 光致荧光谱
%K 量子阱
%K 温度特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=478BD5F0F36565A6081376F52C5DDE91&yid=8CAA3A429E3EA654&vid=F4B561950EE1D31A&iid=9CF7A0430CBB2DFD&sid=FDE90279419513E0&eid=0DDE48E4C6ED47B1&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=2