STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER
n-HgCdTe表面积累层中子带电子迁移率的研究

By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data.The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.