%0 Journal Article
%T STUDY ON THE ELECTRON MOBILITY FOR EACH SUBBAND ON THE n-HgCdTe ACCUMULATED LAYER<br>n-HgCdTe表面积累层中子带电子迁移率的研究
%A GUI YONG-SHENG
%A CHU JUN-HAO
%A CAI YI
%A HENG GUO-ZHEN
%A TANG DING-YUAN
%A <br>桂永胜
%A 褚君浩
%A 蔡 毅
%A 郑国珍
%A 汤定元
%J 物理学报
%D 1998
%I 
%X By using quantitative mobility spectrum analysis technique, the temperature-dependent density and mobility for each subband of the accumulated layer on the n-HgCdTe devices have been determined from magnetic-field-dependent Hall and resistivity data.The results agree well with the Shubnikov-de Hass measurements and theoretical calculations.
%K 电子迁移率
%K 中子带
%K 汞镉碲器件
%K 表面积累层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=478BD5F0F36565A66376D2B09CB93601&yid=8CAA3A429E3EA654&vid=F4B561950EE1D31A&iid=5D311CA918CA9A03&sid=98B9E7974D86A0EF&eid=35D8C930A8A0D2C6&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=2