Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy
离子注入诱导量子阱界面混合效应的光致荧光谱研究

The intermixing induced by ion-implantation on a series of comparable asymmetrical-coupled GaAs/AlGaAs quantum-well samples have been studied by photoluminescence(PL) spectra measurements. The results of the PL spectra and the calculation based on effective mass approximation theory show that the proton implantation is the dominate process for Al diffusion across the heterointerfaces. The main effect of rapid thermal annealing is to remove the non-radiative centre.