%0 Journal Article
%T Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy<br>离子注入诱导量子阱界面混合效应的光致荧光谱研究
%A Chen Gui-Bin
%A Lu Wei
%A Liao Zhong-Lin
%A Li Zhi-Feng
%A Chai Wei-Ying
%A Shen Xue-Chu
%A Chen Chang-Ming
%A Zhu De-Zhang
%A Hu Jun
%A Li Ming-Qian
%A <br>陈贵宾
%A 陆卫
%A 缪中林
%A 李志锋
%A 蔡炜颖
%A 沈学础
%A 陈昌明
%A 朱德彰
%A 胡钧
%A 李明乾
%J 物理学报
%D 2002
%I 
%X The intermixing induced by ion-implantation on a series of comparable asymmetrical-coupled GaAs/AlGaAs quantum-well samples have been studied by photoluminescence(PL) spectra measurements. The results of the PL spectra and the calculation based on effective mass approximation theory show that the proton implantation is the dominate process for Al diffusion across the heterointerfaces. The main effect of rapid thermal annealing is to remove the non-radiative centre.
%K quantum well
%K ion-implantation
%K photoluminescence
%K intermixing<br>量子阱
%K 离子注入
%K 光致荧光谱
%K 界面混合
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5A8F879DDB527C10&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=38B194292C032A66&sid=00520952CD4BF212&eid=A0C7970CD30381EA&journal_id=1000-3290&journal_name=物理学报&referenced_num=4&reference_num=7