Thickness measurement of GaN film based on transmission spectra
基于透射谱的GaN薄膜厚度测量

By analyzing the transmission spectra of hetero-epitaxial GaN films on sapphires, a film thickness measurement method is presented. The method uses the interference effect of the crystal film and considers the effect of the refractive index n on the photon wavelength. Applications of it show that the method is a rapid and precise one for measuring the film thickness of GaN crystals.