Investigation of defect properties in doped diamond films
掺杂金刚石薄膜的缺陷研究

The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR). The results show that the defects annihilating the positrons is almost the same in various doped films, and the interactions between the dopants and the positrons are not distinct. In addition, a small amount of boron atoms can improve the quality of diamond films. The EPR signals of the diamond films arise from carbon dangling bonds.