Calculations of the spin-polarization of the electronic current injected from a ferromagnetic metal into a semiconductor
自旋极化电子从铁磁金属注入半导体时自旋极化的计算

In this paper, we calculate the relationships both between the width of the tunnel barrier and the spin-polarization(SP) of the electronic current when it is injected from a ferromagnetic metal into a semiconductor through a tunnel barrier and between the bias and SP. The results agree with the latest experimental results. We found that a moderate bias and tunnel barrier width allow a giant SP and there is little spin injection at very low bias.