%0 Journal Article
%T Calculations of the spin-polarization of the electronic current injected from a ferromagnetic metal into a semiconductor<br>自旋极化电子从铁磁金属注入半导体时自旋极化的计算
%A Li Tong-Cang
%A Liu Zhi-Jing
%A Wang Ke-Yi
%A <br>李统藏
%A 刘之景
%A 王克逸
%J 物理学报
%D 2003
%I 
%X In this paper, we calculate the relationships both between the width of the tunnel barrier and the spin-polarization(SP) of the electronic current when it is injected from a ferromagnetic metal into a semiconductor through a tunnel barrier and between the bias and SP. The results agree with the latest experimental results. We found that a moderate bias and tunnel barrier width allow a giant SP and there is little spin injection at very low bias.
%K electronic spin injection
%K Slonczewski model
%K tunneling magnetresist ence
%K none zero bias<br>自旋极化电子注入
%K Slonczewski模型，隧道磁电阻，非零偏压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2426F32F99C4B152&yid=D43C4A19B2EE3C0A&vid=286FB2D22CF8D013&iid=708DD6B15D2464E8&sid=E0B0176609BEBAFD&eid=9ABD94C81D0EE5F7&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=29