Controlling of charge solitons in a one-dimensional tunnel junction array
一维介观结链中电荷孤子的控制

The dependence of potential distribution on gate voltages and the electron number distribution in a one-dimensional tunnel junction array is investigated. We find that biasing a gate will excite a static potential soliton similar to a charge soliton. By changing the gate voltage, one can adjust the profile and position of the static potential soliton and then have an effective control of charge solitons.