%0 Journal Article
%T Controlling of charge solitons in a one-dimensional tunnel junction array<br>一维介观结链中电荷孤子的控制
%A 郑小宏
%A 匡乐满
%A 曾朝阳
%J 物理学报
%D 2002
%I 
%X The dependence of potential distribution on gate voltages and the electron number distribution in a one-dimensional tunnel junction array is investigated. We find that biasing a gate will excite a static potential soliton similar to a charge soliton. By changing the gate voltage, one can adjust the profile and position of the static potential soliton and then have an effective control of charge solitons.
%K charge soliton
%K mesoscopic junction
%K single charge tunneling<br>电荷孤子
%K 介观结
%K 单电荷隧穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=210E8C4476001607&yid=C3ACC247184A22C1&vid=987EDA49D8A7A635&iid=0B39A22176CE99FB&sid=389106FB36CA8332&eid=B9B90065CF5CD7F0&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12