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物理学报 1997
STUDY ON ULTRA THIN AlGaAs LAYER ON GaAs
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Abstract:
A Series of samples of ultra thin AlGaAs films grown on GaAs(100) substrate by MBE are studied by photomodulated reflectance (PR)spectroscopy in ultra high vacuum chamber.More than one peak are observed for samples with thickness less than 35nm,but only one peak is observed for 100nm thick sample,The position and width of these peaks change with sample thickness.The experimental results are well explained by step potential model.
