%0 Journal Article
%T STUDY ON ULTRA THIN AlGaAs LAYER ON GaAs<br>超薄层AlGaAs样品的光调制反射谱研究
%A LIU XING-QUAN
%A LU WEI
%A MU YAO-MING
%A QIAO YI-MIN
%A CHEN XIAO-SHUANG
%A WAN MING-FANG
%A ZHA FANG-XING
%A YAN LI-PING
%A SHEN XUE-CHU
%A <br>刘兴权
%A 陆卫
%A 穆耀明
%A 乔怡敏
%A 陈效双
%A 万明芳
%A 查访星
%A 严立平
%A 沈学础
%J 物理学报
%D 1997
%I 
%X A Series of samples of ultra thin AlGaAs films grown on GaAs(100) substrate by MBE are studied by photomodulated reflectance (PR)spectroscopy in ultra high vacuum chamber.More than one peak are observed for samples with thickness less than 35nm,but only one peak is observed for 100nm thick sample,The position and width of these peaks change with sample thickness.The experimental results are well explained by step potential model.
%K 量子阱
%K 铝镓砷
%K MBE
%K 光调制谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=23BAA394FB1545880A17EEE41D9F45F5&yid=5370399DC954B911&vid=D997634CFE9B6321&iid=5D311CA918CA9A03&sid=9A37456714612989&eid=1A9481F9E49EB812&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=5