IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION
低温湿氧氧化提高多孔硅发光的稳定性

The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3), SiH(SiO2) and SiH(O2) structure.