%0 Journal Article
%T IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION<br>低温湿氧氧化提高多孔硅发光的稳定性
%A CHEN HUA-JIE
%A ZHANG FU-LONG
%A FAN HONG-LEI
%A CHEN XI-YING
%A HUANG DA-MING
%A YU MING-REN
%A HOU XIAO-YUAN
%A LI GU-BO
%A <br>陈华杰
%A 张甫龙
%A 范洪雷
%A 阵溪滢
%A 黄大鸣
%A 俞鸣人
%A 侯晓远
%A 李谷波
%J 物理学报
%D 1996
%I 
%X The bright and stable porous silicon have been obtained by using damp oxidation at moderate temperature. EPR measurements showed that the density of Si dangling bonds in the sample is lower than that by dry oxidation. We also took FTIR measurements and concluded that the stabilization of the photoluminescence from porous silicon is due to the formation of SiH(O3), SiH(SiO2) and SiH(O2) structure.
%K 氧化
%K 多孔硅
%K 发光稳定性
%K 低温湿氧
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7411BF4698E83734F9F763B510F34B7D&yid=8A15F8B0AA0E5323&vid=94E7F66E6C42FA23&iid=0B39A22176CE99FB&sid=E42CAFB11D4BE21A&eid=358F98408588E522&journal_id=1000-3290&journal_name=物理学报&referenced_num=4&reference_num=2