LESR STUDIES ON DOPED A-Si1-xCx:H FILMS
掺杂的a-Si1-xCx:H膜的LESR研究

In this paper, we describe the results of the equilibrium ESE and the LESE measurements in B- or P-doped a-Si1-xCx:H films at 77 K. To our knowledge, this is the first observation of the ESE of holes in the valence band tail for the films. The present LESE result shows that B-doping does not reduce the total density of dangling bonds including D+ and D-, although it improves the photoconductivity in a-Si1-xCx :H.