%0 Journal Article
%T LESR STUDIES ON DOPED A-Si1-xCx:H FILMS<br>掺杂的a-Si1-xCx:H膜的LESR研究
%A CHEN GUANG-HUA
%A ZHANG FANG-QING
%A XU XI-XIANG
%A A MOKIMOTO
%A M KUMEDA
%A T SHIMIZU
%A <br>陈光华
%A 张仿清
%A 徐希翔
%A 森本章治
%A 久米田稔
%A 清水立生
%J 物理学报
%D 1986
%I 
%X In this paper, we describe the results of the equilibrium ESE and the LESE measurements in B- or P-doped a-Si1-xCx:H films at 77 K. To our knowledge, this is the first observation of the ESE of holes in the valence band tail for the films. The present LESE result shows that B-doping does not reduce the total density of dangling bonds including D+ and D-, although it improves the photoconductivity in a-Si1-xCx :H.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=95C53E21E07E8A5805280ED8C84D3B1C&yid=4E65715CCF57055A&vid=6209D9E8050195F5&iid=E158A972A605785F&sid=5A751AE9FA58A3FB&eid=91BAD12CFABB3251&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0