BEHAVIOUR OF THE FRACTAL CRYSTALLIZATION IN Pd, Ge THIN FILM SYSTEM
Pd,Ge薄膜体系中的分形晶化行为

The behaviour of the fractal crystallization in Pd, Ge thin film system of various ratios of thickness (or composition) after annealing have been investigated by transmission electron microscopy (TEM). It was difficult for the coevaporated Pd-Ge films to realize the fractal crystallization. The production of the fractal structure in Pd/a-Ge bilayers was easier than that in a-Ge/Pd bilayers. The fractal crystallizations were restrainted because of the formation of the compounds (Pd2Ge and PdGe) in Pd, Ge bilayers. The growting of the fractal struc ture depends on the competition of the two precesses of a-Ge crystallization and compound formation.