%0 Journal Article
%T BEHAVIOUR OF THE FRACTAL CRYSTALLIZATION IN Pd, Ge THIN FILM SYSTEM<br>Pd,Ge薄膜体系中的分形晶化行为
%A ZHANG SHU-YUAN
%A CHEN ZHI-WEN
%A TAN SHUN
%A ZHU JING-SHENG
%A LI FAN-QING
%A WU ZI-QIN
%A <br>张庶元
%A 陈志文
%A 谭舜
%A 朱警生
%A 李凡庆
%A 吴自勤
%J 物理学报
%D 1996
%I 
%X The behaviour of the fractal crystallization in Pd, Ge thin film system of various ratios of thickness (or composition) after annealing have been investigated by transmission electron microscopy (TEM). It was difficult for the coevaporated Pd-Ge films to realize the fractal crystallization. The production of the fractal structure in Pd/a-Ge bilayers was easier than that in a-Ge/Pd bilayers. The fractal crystallizations were restrainted because of the formation of the compounds (Pd2Ge and PdGe) in Pd, Ge bilayers. The growting of the fractal struc ture depends on the competition of the two precesses of a-Ge crystallization and compound formation.
%K 金属／半导体
%K 锗
%K 薄膜
%K 分形晶化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7411BF4698E837347BC00A95635CB769&yid=8A15F8B0AA0E5323&vid=94E7F66E6C42FA23&iid=CA4FD0336C81A37A&sid=BB0EA31DB1B01173&eid=8C83C265AD318E34&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=6