PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES
(110)取向的调制掺杂GaAs-AIGaAs单异质结的光致荧光谱

The photoluminescence spectra of (110) modulation-doped GaAs-AlGaAs het-erostructures grown under high and low carbon background were measured at 4.2K. For high carbon specimen the luminescence peak from the recombination of 2D electrons in channel with holes bound to neutral acceptors was observed, while for low carbon specimen only lines related to bulk GaAs were observed.