%0 Journal Article
%T PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES<br>(110)取向的调制掺杂GaAs-AIGaAs单异质结的光致荧光谱
%A CHENG WEN-QIN
%A LIU SHUANG
%A ZHOU JUN-MING
%A LIU YU-LONG
%A ZHU KE
%A <br>程文芹
%A 刘双
%A 周均铭
%A 刘玉龙
%A 朱恪
%J 物理学报
%D 1993
%I 
%X The photoluminescence spectra of (110) modulation-doped GaAs-AlGaAs het-erostructures grown under high and low carbon background were measured at 4.2K. For high carbon specimen the luminescence peak from the recombination of 2D electrons in channel with holes bound to neutral acceptors was observed, while for low carbon specimen only lines related to bulk GaAs were observed.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=74FBE825855B3F66FE94786899800CD2&yid=D418FDC97F7C2EBA&vid=ECE8E54D6034F642&iid=9CF7A0430CBB2DFD&sid=513A25C6B816CF5D&eid=F41021172F25CDE0&journal_id=1000-3290&journal_name=物理学报&referenced_num=3&reference_num=0