RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION
半导体深能级瞬态谱中多子脉冲下的少子陷阱响应

A minority earlier peak is discovered in the DLTS of a silicon p+n junction doped with gold under majority carrier pulse condition. The major experimental results and systematic physical analyses is presented. We show, that the minority carrier peak is a result due to the capture of a free minority carrier tail from the side of the heavily doped region of the p+n junction at the mincrirty carrier traps in the space charge region, which is built by the built-in potential, and its subsequent emission.