%0 Journal Article
%T RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION<br>半导体深能级瞬态谱中多子脉冲下的少子陷阱响应
%A FU CHUN-YIN
%A LU YONG-LING
%A ZENG SHU-RONG
%A <br>傅春寅
%A 鲁永令
%A 曾树荣
%J 物理学报
%D 1985
%I 
%X A minority earlier peak is discovered in the DLTS of a silicon p+n junction doped with gold under majority carrier pulse condition. The major experimental results and systematic physical analyses is presented. We show, that the minority carrier peak is a result due to the capture of a free minority carrier tail from the side of the heavily doped region of the p+n junction at the mincrirty carrier traps in the space charge region, which is built by the built-in potential, and its subsequent emission.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=14898970D1EF570CA415FFB62563772D&yid=74E41645C164CD61&vid=339D79302DF62549&iid=59906B3B2830C2C5&sid=9B1BEE8CA21457F1&eid=330226EF26D09028&journal_id=1000-3290&journal_name=物理学报&referenced_num=2&reference_num=0