A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GaAs
GaAs中N等电子陷阱的研究

The photoluminescences of nitrogen implanted GaAs samples at 77 K have been studied under high pressures. The luminescence peaks of excitons Nx bound to N trap central cell potential and excitons NT bound to deformation potential were observed. The exprimen-tal value of pressure coefficient of Nx level is 2.8 meV/kbar. Under the atmospheric pressure, the N resonant state is at 179 meV above the conduction band edge. The pressure behaviors of electron-phonon coupling strength of N isoelectronic trap and effective radius of bound exciton are discussed.