%0 Journal Article
%T A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GaAs<br>GaAs中N等电子陷阱的研究
%A ZHAO XUE-SHU
%A LI GUO-HUA
%A HAN HE-XIANG
%A WANG ZHAO-PING
%A TANG RU-MING
%A CHE RONG-ZHEN
%A <br>赵学恕
%A 李国华
%A 韩和相
%A 汪兆平
%A 唐汝明
%A 车荣钲
%J 物理学报
%D 1984
%I 
%X The photoluminescences of nitrogen implanted GaAs samples at 77 K have been studied under high pressures. The luminescence peaks of excitons Nx bound to N trap central cell potential and excitons NT bound to deformation potential were observed. The exprimen-tal value of pressure coefficient of Nx level is 2.8 meV/kbar. Under the atmospheric pressure, the N resonant state is at 179 meV above the conduction band edge. The pressure behaviors of electron-phonon coupling strength of N isoelectronic trap and effective radius of bound exciton are discussed.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7F04DA7AB947283256D86EC295F597C4&yid=36250D1D6BDC99BD&vid=27746BCEEE58E9DC&iid=E158A972A605785F&sid=4964C30D71DF45FF&eid=106103EB0EA31435&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0