DEFECTS ETCHING PITS OBSERVATIONS AND ANALYSES ON EPITAXIAL SILICON CLEAVAGE SURFACE
硅外延层解理面缺陷腐蚀坑的观察及初步分析

In this paper results of observation using the Wright etchent on epitaxial silicon (111) cleavage surface are described. On silicon cleavage surface the etehent reveals stacking faults, dislocations, S-pits and other etch pits. Some of the buried stacking faults are also observed.